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topic:optics:quantumoptics:detection:sspd:process
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Table of Contents
Fabricating SNSPDs
Fabrication based on Nb(Ti)N
Film deposition
| Group | Year | Publication | Process | Recipe | Notes |
|---|---|---|---|---|---|
| Karl K. Berggren et al. NbN | 2009 | [Dauler:2009] | DC magnetron sputtering | Sapphire, 800C, 8 mTorr, with 100 sccm Ar, 5 sccm N2 | Parameters varied: deposition time, substrate material and deposition pressure. Deposition time strongly influences the yield. (Pg 60,61) |
| 2015 | \cite{Najafi.Dane.ea:2015} | DC magnetron sputtering | as above | Solvent cleaning exposure to an oxygen plasma (20% 02 in He) 100 W for 3 min | |
| 2017 | \cite{Zhu:2017} | DC magnetron sputtering | AlN, 840C, Ar, N2 26.5sccm, 8sccm, 2.5mTorr | Sheet resistance goal between 500-530 Ohm/sq | |
| Jeff F. Young NbTiN | 2017 | \cite{Yan:2017} | DC magnetron sputtering | STAR Cryoelectronics Inc. Commercial | |
| Robert Hadfield NbTiN | <2017 | \cite{Kirkwood:2017} | DC magnetron sputtering | STAR Cryoelectronics Inc. Commercial | |
| 2017 | \cite{Banerjee:2017} | DC magnetron sputtering | Own developed |
Lithography
| Group | Year | Publication | Resist | Recipe | Notes |
|---|---|---|---|---|---|
| Karl K. Berggren et al. NbN | – | – | – | – | |
| Jeff F. Young . NbTiN | 2017 | \cite{Yan:2017} | ZEP520A (past shelf life) (Positive resist) (markers) | 500nm, 180C 3 min, o-xylene | Preparation: DI water, 2min US, Acetone, 2min US, IPA, 2min US. N2 dry, 100C dehydration for 1 min |
| (negative resist)(meander) | 150nm, 180C 3 min | ||||
| Wolfram Pernice . NbN | 2018 | \cite{Munzberg.Vetter.ea:2018} | HSQ | Cover the NbN with a SiO2 layer to protect against oxidation and as adhesion promoter for HSQ. |
Pattern transfer
All of the groups in literature use a dry etching process to transfer the pattern on the film.
| Group | Year | Publication | Process Gases | Recipe | Notes |
|---|---|---|---|---|---|
| Karl K. Berggren NbN | <2015 | \cite{Dauler:2009}, \cite{Yang:2005} | CF4 | 10mTorr, 15sccm CF4, 100W RF power | |
| 2015 | \cite{Najafi.Mower.ea:2015}, \cite{Najafi.Dane.ea:2015}, \cite{Najafi:2015} | CF4 | 50W | rest of recipe not mentioned. | |
| 2017 | \cite{Zhu:2017} | CF4, He | 10mTorr, He, CF4, 7sccm, 15sccm, 50W | Cleaning etch before with CF4 and O2. Over-etching reduces device yield. | |
| Jeff F. Young NbTiN | 2017 | \cite{Yan:2017} | CF4, O2 | 30mTorr, 15sccm CF4, 2 sccm O2, 50W RF power | No saturating results seen. |
| Robert Hadfield NbTiN | 2017 | \cite{Kirkwood:2017} | CF4 | 30mTorr, 50sccm CF4, 80W RF power | Not sure about the quality of the detectors |
| Wolfram Pernice . NbN | 2018 | \cite{Munzberg.Vetter.ea:2018} | Fluorine based | Cover the NbN with a SiO2 layer to protect against oxidation and as adhesion promoter for HSQ. |
Characterization
The different techniques for Film characterization given by different groups.
| Group | Method | Publication | Notes |
|---|---|---|---|
| Karl K. Berggren NbN | $R_\mathrm{RT} / R_\mathrm{20K} $ | \cite{Zhu:2017} | Comparing the value at RT vs just above Transition temperature allows to investigate impurities. Good Films had on the order of 0.84 |
| $\Delta T_C$ | \cite{Zhu:2017} | Difference between the temperature of 10% of $R_\mathrm{20K}$ and 90% of $R_\mathrm{20K}$. Good Films had approx 1.8K | |
| $T_C$ | \cite{Zhu:2017} | Resistance below $50\% ~ R_\mathrm{20K}$ |
topic/optics/quantumoptics/detection/sspd/process.1770992953.txt.gz · Last modified: by samuel
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