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topic:optics:quantumoptics:detection:sspd:process [2021/03/26 17:39] – ↷ Page moved from research:optics:quantumoptics:detection:sspd:process to topic:optics:quantumoptics:detection:sspd:process samueltopic:optics:quantumoptics:detection:sspd:process [2026/02/13 14:33] (current) – samuel
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 ===== Film deposition ===== ===== Film deposition =====
 ^ Group ^ Year ^ Publication ^ Process ^ Recipe ^ Notes ^ ^ Group ^ Year ^ Publication ^ Process ^ Recipe ^ Notes ^
-| Karl K. Berggren et al. \\ **NbN** | 2009 | \cite{Dauler:2009} | DC magnetron sputtering | Sapphire, 800C, 8 mTorr, with 100 sccm Ar, 5 sccm N<sub>2</sub> | Parameters varied: deposition time, substrate material and deposition pressure. \\ Deposition time strongly influences the yield. (Pg 60,61) | +| Karl K. Berggren et al. \\ **NbN** | 2009 | {[Dauler:2009]} | DC magnetron sputtering | Sapphire, 800C, 8 mTorr, with 100 sccm Ar, 5 sccm N<sub>2</sub> | Parameters varied: deposition time, substrate material and deposition pressure. \\ Deposition time strongly influences the yield. (Pg 60,61) | 
-| :::  | 2015 | \cite{Najafi.Dane.ea:2015} | DC magnetron sputtering | as above | Solvent cleaning exposure to an oxygen plasma (20% 0<sub>2</sub> in He) 100 W for 3 min | +| :::  | 2015 | {[Najafi.Dane.ea:2015]} | DC magnetron sputtering | as above | Solvent cleaning exposure to an oxygen plasma (20% 0<sub>2</sub> in He) 100 W for 3 min | 
-| :::  | 2017 | \cite{Zhu:2017} | DC magnetron sputtering | AlN, 840C, Ar, N<sub>2</sub> 26.5sccm, 8sccm, 2.5mTorr | Sheet resistance goal between 500-530 Ohm/sq | +| :::  | 2017 | {[Zhu:2017]} | DC magnetron sputtering | AlN, 840C, Ar, N<sub>2</sub> 26.5sccm, 8sccm, 2.5mTorr | Sheet resistance goal between 500-530 Ohm/sq | 
-| Jeff F. Young \\ **NbTiN** | 2017 | \cite{Yan:2017} | DC magnetron sputtering | STAR Cryoelectronics Inc. Commercial | | +| Jeff F. Young \\ **NbTiN** | 2017 | {[Yan:2017]} | DC magnetron sputtering | STAR Cryoelectronics Inc. Commercial | | 
-| Robert Hadfield \\ **NbTiN** | <2017 | \cite{Kirkwood:2017} | DC magnetron sputtering | STAR Cryoelectronics Inc. Commercial | | +| Robert Hadfield \\ **NbTiN** | <2017 | {[Kirkwood:2017} | DC magnetron sputtering | STAR Cryoelectronics Inc. Commercial | | 
-| :::  | 2017 | \cite{Banerjee:2017} | DC magnetron sputtering | Own developed | |+| :::  | 2017 | {[Banerjee:2017]} | DC magnetron sputtering | Own developed | |
 ===== Lithography ===== ===== Lithography =====
 ^ Group ^ Year ^ Publication ^ Resist ^ Recipe ^ Notes ^ ^ Group ^ Year ^ Publication ^ Resist ^ Recipe ^ Notes ^
 | Karl K. Berggren et al. \\ **NbN** | -- | -- | -- | -- | | Karl K. Berggren et al. \\ **NbN** | -- | -- | -- | -- |
-| Jeff F. Young . \\ **NbTiN** | 2017 | \cite{Yan:2017}  |ZEP520A (past shelf life) (Positive resist) (markers) | 500nm, 180C 3 min, o-xylene | Preparation: DI water, 2min US, Acetone, 2min US, IPA, 2min US. N2 dry, 100C dehydration for 1 min|+| Jeff F. Young . \\ **NbTiN** | 2017 | {[Yan:2017]}  |ZEP520A (past shelf life) (Positive resist) (markers) | 500nm, 180C 3 min, o-xylene | Preparation: DI water, 2min US, Acetone, 2min US, IPA, 2min US. N2 dry, 100C dehydration for 1 min|
 | ::: | ::: | ::: | (negative resist)(meander) | 150nm, 180C 3 min | ::: | | ::: | ::: | ::: | (negative resist)(meander) | 150nm, 180C 3 min | ::: |
-| Wolfram Pernice . \\ **NbN** | 2018 | \cite{Munzberg.Vetter.ea:2018}  | HSQ |  | Cover the NbN with a SiO2 layer to protect against oxidation and as adhesion promoter for HSQ.|+| Wolfram Pernice . \\ **NbN** | 2018 | {[Munzberg.Vetter.ea:2018]}  | HSQ |  | Cover the NbN with a SiO2 layer to protect against oxidation and as adhesion promoter for HSQ.|
 ===== Pattern transfer ===== ===== Pattern transfer =====
 All of the groups in literature use a dry etching process to transfer the pattern on the film. All of the groups in literature use a dry etching process to transfer the pattern on the film.
  
 ^ Group ^ Year ^ Publication ^ Process Gases ^ Recipe ^ Notes ^ ^ Group ^ Year ^ Publication ^ Process Gases ^ Recipe ^ Notes ^
-| Karl K. Berggren \\ **NbN** | <2015 | \cite{Dauler:2009}, \cite{Yang:2005} | CF<sub>4</sub> | 10mTorr, 15sccm CF<sub>4</sub>, 100W RF power | | +| Karl K. Berggren \\ **NbN** | <2015 | {[Dauler:2009]}, {[Yang:2005]} | CF<sub>4</sub> | 10mTorr, 15sccm CF<sub>4</sub>, 100W RF power | | 
-| :::  | 2015 | \cite{Najafi.Mower.ea:2015}, \cite{Najafi.Dane.ea:2015}, \cite{Najafi:2015} | CF<sub>4</sub>| 50W | rest of recipe not mentioned. | +| :::  | 2015 | {[Najafi.Mower.ea:2015]}, {[Najafi.Dane.ea:2015]}, {[Najafi:2015]} | CF<sub>4</sub>| 50W | rest of recipe not mentioned. | 
-| :::  | 2017 | \cite{Zhu:2017} | CF<sub>4</sub>, He| 10mTorr, He, CF4, 7sccm, 15sccm, 50W | Cleaning etch before with CF<sub>4</sub> and O<sub>2</sub>. Over-etching reduces device yield. | +| :::  | 2017 | {[Zhu:2017]} | CF<sub>4</sub>, He| 10mTorr, He, CF4, 7sccm, 15sccm, 50W | Cleaning etch before with CF<sub>4</sub> and O<sub>2</sub>. Over-etching reduces device yield. | 
-| Jeff F. Young \\ **NbTiN** | 2017 | \cite{Yan:2017} | CF<sub>4</sub>, O<sub>2</sub> | 30mTorr, 15sccm CF<sub>4</sub>, 2 sccm O<sub>2</sub>, 50W RF power | No saturating results seen. | +| Jeff F. Young \\ **NbTiN** | 2017 | {[Yan:2017]} | CF<sub>4</sub>, O<sub>2</sub> | 30mTorr, 15sccm CF<sub>4</sub>, 2 sccm O<sub>2</sub>, 50W RF power | No saturating results seen. | 
-| Robert Hadfield \\ **NbTiN** | 2017 | \cite{Kirkwood:2017} | CF<sub>4</sub> | 30mTorr, 50sccm CF<sub>4</sub>, 80W RF power | Not sure about the quality of the detectors | +| Robert Hadfield \\ **NbTiN** | 2017 | {[Kirkwood:2017]} | CF<sub>4</sub> | 30mTorr, 50sccm CF<sub>4</sub>, 80W RF power | Not sure about the quality of the detectors | 
-| Wolfram Pernice . \\ **NbN** | 2018 | \cite{Munzberg.Vetter.ea:2018}  | Fluorine based |  | Cover the NbN with a SiO2 layer to protect against oxidation and as adhesion promoter for HSQ.|+| Wolfram Pernice . \\ **NbN** | 2018 | {[Munzberg.Vetter.ea:2018]}  | Fluorine based |  | Cover the NbN with a SiO2 layer to protect against oxidation and as adhesion promoter for HSQ.|
 ===== Characterization ===== ===== Characterization =====
 The different techniques for Film characterization given by different groups. The different techniques for Film characterization given by different groups.
 ^ Group ^ Method ^ Publication ^ Notes ^ ^ Group ^ Method ^ Publication ^ Notes ^
-| Karl K. Berggren \\ **NbN** | $R_\mathrm{RT} / R_\mathrm{20K} $ | \cite{Zhu:2017} | Comparing the value at RT vs just above Transition temperature allows to investigate impurities. Good Films had on the order of 0.84 | +| Karl K. Berggren \\ **NbN** | $R_\mathrm{RT} / R_\mathrm{20K} $ | {[Zhu:2017]} | Comparing the value at RT vs just above Transition temperature allows to investigate impurities. Good Films had on the order of 0.84 | 
-| ::: | $\Delta T_C$ | \cite{Zhu:2017} | Difference between the temperature of 10% of $R_\mathrm{20K}$ and 90% of $R_\mathrm{20K}$. Good Films had approx 1.8K| +| ::: | $\Delta T_C$ | {[Zhu:2017]} | Difference between the temperature of 10% of $R_\mathrm{20K}$ and 90% of $R_\mathrm{20K}$. Good Films had approx 1.8K| 
-| ::: | $T_C$ | \cite{Zhu:2017} | Resistance below $50\% ~ R_\mathrm{20K}$|+| ::: | $T_C$ | {[Zhu:2017]} | Resistance below $50\% ~ R_\mathrm{20K}$| 
 + 
 + 
 +<bibtex bibliography> 
 +</bibtex>
  
topic/optics/quantumoptics/detection/sspd/process.1616780352.txt.gz · Last modified: by samuel

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